The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jul. 27, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Beth R. Cook, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02);
Abstract

Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes a cell plate, a top electrode, and an insulator that separates the top electrode from bottom electrodes. The integrated assembly may include a first group of bottom electrodes that are coupled to the cell plate via a corresponding first group of leaker devices, wherein a first region between the first group of leaker includes the top electrode and the insulator. The integrated assembly may include a second group of bottom electrodes that are electrically coupled to the cell plate via a corresponding second group of leaker devices, wherein a second region between the second group of leaker devices does not include the top electrode and does not include the insulator. The first group of leaker devices and the second group of leaker devices have substantially identical electrical properties.


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