The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Nov. 13, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Jinha Hwang, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0185 (2006.01); H03F 3/45 (2006.01); H03K 3/012 (2006.01); H03K 3/356 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018528 (2013.01); H03F 3/45183 (2013.01); H03K 3/012 (2013.01); H03K 3/35613 (2013.01);
Abstract

A semiconductor device includes a first sensing stage configured to sense a voltage differential of a data signal and a reference signal and output a first amplified voltage differential, wherein the first amplified voltage differential includes a first voltage at a first output node and a second voltage at a second output node. The semiconductor device further includes a second sensing stage configured to sense the first amplified voltage differential and output a second amplified voltage differential, where the second amplified voltage differential includes a third voltage at a third output node and a fourth voltage at a fourth output node. A first power gating circuit is coupled to the third output node and a second power gating circuit is coupled to the fourth output node.


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