The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Nov. 28, 2022
Nanya Technology Corporation, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipel, TW;
Abstract
A method of forming a semiconductor structure includes a number of operations. Conductors are formed in a first dielectric layer on a substrate. First conductive vias overlapping the conductors are formed in a second dielectric layer on the substrate. Electrodes are formed in a third dielectric layer on the substrate, wherein each of the electrodes overlaps one of the first conductive vias. A hard mask is formed on the third dielectric layer. Mandrel exposures are formed on the hard mask. Patterning spacers is formed on sidewalls of the mandrel exposures. The mandrel exposures are removed. The hard mask is patterned based on the patterning spacers and the third dielectric layer is patterned based on the patterning spacers to form conductive lines along the second direction in the third dielectric layer, wherein each of the conductive lines overlaps one of the first conductive vias.