The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Oct. 26, 2021
Spts Technologies Limited, Newport, GB;
Weikang Fan, Newport, GB;
Stephan Shannon L. Lilje, Newport, GB;
SPTS Technologies Limited, Newport, GB;
Abstract
Plasma etching a compound semiconductor substrate includes providing a substrate that includes a compound semiconductor material on a substrate support within a chamber. An etchant gas or gas mixture is introduced into the chamber. A plasma of the etchant gas or gas mixture is sustained within the chamber to plasma etch the compound semiconductor material. A pulsed electrical bias power is applied to the substrate support whilst the plasma is being sustained. The pulsed electrical bias power has a pulse frequency of less than or equal to about 160 Hz and a duty cycle of less than or equal to about 50%.