The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Sep. 01, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Jeong-Seok Na, San Jose, CA (US);
Yao-Tsung Hsieh, San Jose, CA (US);
Chiukin Steven Lai, Sunnyvale, CA (US);
Patrick A. Van Cleemput, Duvall, WA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/08 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/0245 (2013.01); C23C 16/045 (2013.01); C23C 16/08 (2013.01); C23C 16/45553 (2013.01); H01L 21/76879 (2013.01);
Abstract
Provided are methods of filling patterned features with molybdenum (Mo). The methods involve selective deposition of Mo films on bottom metal-containing surfaces of a feature including dielectric sidewalls. The selective growth of Mo on the bottom surface allows bottom-up growth and high quality, void-free fill. Also provided are related apparatus.