The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Feb. 27, 2024
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yen-Yu Chen, Kaohsiung, TW;
Yu-Chi Lu, Hsinchu, TW;
Chih-Pin Tsao, Hsinchu County, TW;
Shih-Hsun Chang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H10D 64/667 (2025.01);
Abstract
A device includes gate spacers over a substrate, and a gate structure between the gate spacers. The gate structure includes an interfacial layer over the substrate, a metal oxide layer over the interfacial layer, a metal oxide layer over the interfacial layer, a first metal nitride layer over the metal oxide layer, a second metal nitride over the first metal nitride layer, and a tungsten-containing material interposing the first metal nitride layer and the second metal nitride layer.