The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jul. 29, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kishore Kumar Muchherla, Fremont, CA (US);

Violante Moschiano, Avezzano, IT;

Akira Goda, Tokyo, JP;

Jeffrey S. McNeil, Nampa, ID (US);

Eric N. Lee, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/4096 (2006.01); G11C 11/406 (2006.01); G11C 11/4072 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 11/40622 (2013.01); G11C 11/4072 (2013.01); G11C 11/4085 (2013.01);
Abstract

Control logic in a memory device determines to initiate a string read operation on a first memory string of a plurality of memory strings in a block of a memory array, the block comprising a plurality of wordlines, wherein the first memory string is designated as a sacrificial string. The control logic further causes a read voltage to be applied to each of the plurality of wordlines concurrently and senses a level of current flowing through the sacrificial string while the read voltage is applied. In addition, the control logic identifies, based on the level of current flowing through the sacrificial string, whether a threshold level of read disturb has occurred on the block.


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