The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jun. 23, 2023
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Tsutomu Ogihara, Joetsu, JP;

Tsukasa Watanabe, Joetsu, JP;

Yusuke Biyajima, Joetsu, JP;

Masahiro Kanayama, Joetsu, JP;

Ryo Mitsui, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/075 (2006.01); C07F 7/18 (2006.01); C08G 77/14 (2006.01); C08G 77/18 (2006.01); C08G 77/24 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/36 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0752 (2013.01); C07F 7/1804 (2013.01); C08G 77/14 (2013.01); C08G 77/18 (2013.01); C08G 77/24 (2013.01); G03F 7/0751 (2013.01); G03F 7/0757 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01); G03F 7/36 (2013.01);
Abstract

The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where Rrepresents an iodine-containing organic group; and Rand Rare each independently identical to R, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.


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