The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Dec. 12, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Tai-Cheng Hou, Tainan, TW;
Chau-Chung Hou, Tainan, TW;
Da-Jun Lin, Kaohsiung, TW;
Wei-Xin Gao, Tainan, TW;
Fu-Yu Tsai, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); G11C 11/16 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); G11C 11/161 (2013.01); H01L 21/7684 (2013.01); H01L 23/5226 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract
A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a substrate, forming a first inter-metal dielectric (IMD) layer on the MTJ, removing part of the first IMD layer to form a damaged layer on the MTJ and a trench exposing the damaged layer, performing a ultraviolet (UV) curing process on the damaged layer, and then conducting a planarizing process to remove the damaged layer and part of the first IMD layer.