The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Feb. 15, 2022
Applicants:

Applied Materials, Inc., Santa Clara, CA (US);

National University of Singapore, Singapore, SG;

Inventors:

Vicknesh Sahmuganathan, Singapore, SG;

Eswaranand Venkatasubramanian, Santa Clara, CA (US);

Jiteng Gu, Singapore, SG;

Kian Ping Loh, Singapore, SG;

Abhijit Basu Mallick, Sunnyvale, CA (US);

John Sudijono, Singapore, SG;

Assignees:

Applied Materials, Inc., Santa Clara, CA (US);

National University of Singapore, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01); H01L 21/02205 (2013.01);
Abstract

Hard masks and methods of forming hard masks are described. The hard mask has an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa. The method comprises exposing a substrate to a deposition gas comprising a dopant gas or a precursor (solid (e.g. Alkylborane compounds) or liquid (e.g. Borazine)), a carbon gas and argon at a temperature less than or equal to 550 C, and igniting a plasma from the deposition gas to form an ultrananocrystalline diamond film having an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa.


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