The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Oct. 22, 2021
SK Keyfoundry Inc., Cheongju-si, KR;
Jong Yeul Jeong, Cheongju-si, KR;
Jeong Ho Sheen, Cheongju-si, KR;
Guk Hyeon Yu, Okcheon-gun, KR;
Kang Sup Shin, Cheongju-si, KR;
Kyung Ho Lee, Cheongju-si, KR;
SK keyfoundry Inc., Cheongju-si, KR;
Abstract
A semiconductor device includes a substrate, the substrate includes a capacitor region and a metal wiring region. The capacitor region includes a lower electrode formed on the substrate, an interlayer insulating layer formed on the lower electrode, a dielectric layer pattern formed on the interlayer insulating layer, and an upper electrode formed on the dielectric layer pattern. The metal wiring region includes a lower metal wiring formed parallel to the lower electrode, the interlayer insulating layer formed on the lower metal wiring, an upper insulating layer formed on the interlayer insulating layer and having a thickness smaller than a thickness of the interlayer insulating layer, and an upper metal wiring formed on the upper insulating layer, and formed in parallel with the upper electrode. The upper insulating layer and the dielectric layer pattern are formed of different materials.