The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jan. 02, 2024
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Gurtej Sandhu, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/32 (2006.01); G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/42 (2006.01); H10D 84/40 (2025.01); H10F 71/00 (2025.01); H10F 77/40 (2025.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
G02B 6/42 (2013.01); G02B 6/12004 (2013.01); G02B 6/122 (2013.01); H10D 84/40 (2025.01); H10F 71/128 (2025.01); H10F 77/413 (2025.01); G02B 2006/12061 (2013.01); G02B 2006/12142 (2013.01); G02B 2006/12169 (2013.01); H01L 21/324 (2013.01);
Abstract
The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.