The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Feb. 15, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kuang-Wei Cheng, Hsinchu, TW;

Sung-Ju Huang, Taipei, TW;

Yung-Tsun Liu, Taipei, TW;

Chih-Tsung Lee, Hsinchu, TW;

Chyi-Tsong Ni, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); B08B 9/08 (2006.01); C23C 16/32 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); B08B 9/08 (2013.01); C23C 16/325 (2013.01); C23C 16/401 (2013.01); C23C 16/45525 (2013.01); H01L 21/02126 (2013.01); H01L 21/0228 (2013.01); B08B 2209/08 (2013.01);
Abstract

A method of fabricating semiconductor devices includes: loading one or more semiconductor wafers into a plurality of stations provided within a process chamber; applying a process to the semiconductor wafers which deposits a material on the one or more semiconductor wafers within the process chamber; and cleaning the process chamber. Suitably, cleaning the process chamber includes flowing a cleaning gas into the process chamber toward a deflector arranged in the process chamber, the deflector having a first surface upon which the flowed cleaning gas impinges, the first surface directing a first portion of the flowed cleaning gas impinging thereon in a first trajectory toward a first end of the process chamber and directing a second portion of the flowed cleaning gas impinging thereon in a second trajectory toward a second end of the process chamber, the second end being opposite the first end.


Find Patent Forward Citations

Loading…