The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Jun. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tung-Ying Lee, Hsinchu, TW;

Shao-Ming Yu, Hsinchu County, TW;

Kai-Tai Chang, Kaohsiung, TW;

Hung-Li Chiang, Taipei, TW;

Yu-Sheng Chen, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); G11C 13/0069 (2013.01); H10B 63/80 (2023.02); H10N 70/882 (2023.02); H10N 70/8833 (2023.02);
Abstract

A memory device is provided. The memory device includes a bottom electrode, a first data storage layer, a second data storage layer, an interfacial conductive layer and a top electrode. The first data storage layer is disposed on the bottom electrode and in contact with the bottom electrode. The second data storage layer is disposed over the first data storage layer. The interfacial conductive layer is disposed between the first data storage layer and the second data storage layer. The top electrode is disposed over the second data storage layer.


Find Patent Forward Citations

Loading…