The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Oct. 15, 2021
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Tung Huei Ke, Leuven, BE;

David Cheyns, Heffen, BE;

Pawel Malinowski, Heverlee, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 50/15 (2023.01); G03F 7/20 (2006.01); H10K 50/16 (2023.01); H10K 50/81 (2023.01); H10K 50/82 (2023.01); H10K 71/00 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
H10K 50/156 (2023.02); H10K 50/16 (2023.02); H10K 50/81 (2023.02); H10K 50/82 (2023.02); H10K 71/00 (2023.02); G03F 7/2022 (2013.01); H10K 85/615 (2023.02); H10K 85/624 (2023.02); H10K 85/626 (2023.02); H10K 85/633 (2023.02); H10K 85/6572 (2023.02);
Abstract

A semiconductor device comprises a substrate, a first hole-transporting layer over the substrate, a first electron-transporting layer on the first hole-transporting layer, and a second hole-transporting layer over the first electron-transporting layer. At least one of the first electron-transporting layer and the second hole-transporting layer has an organic component. The device is characterized by one of the following: a metal oxide layer present on the first electron-transporting layer, wherein a second electron-transporting layer is on the metal oxide layer, wherein the second hole-transporting layer is on the second electron-transporting layer, or the second hole transporting layer has a first p-doped hole-transporting surface present on the first electron-transporting, layer and a second p-doped hole-transporting surface facing away from the first p-doped hole-transporting surface, or the first electron-transporting layer is on a top surface and on sidewalls of the first hole-transporting layer.


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