The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Apr. 29, 2024
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Francesco Gramuglia, Augsburg, DE;
Eng Huat Toh, Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
Structures including a photodetector, such as a single-photon avalanche diode, and related methods. The structure comprises a semiconductor layer having a device region and a top surface, and a photodetector including a first well in the device region and a second well. The first well is disposed between the second well and the top surface. The structure further comprises a deep trench isolation region that extends from the top surface into the semiconductor layer. The deep trench isolation region surrounds a perimeter of the device region, and the deep trench isolation region comprises a dielectric material. The structure further comprises a contact including a conductor layer that extends from the top surface of the semiconductor layer to the second well. The contact has a first discrete position about the perimeter of the device region.