The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jo-Chun Hung, Hsinchu, TW;
Chih-Wei Lee, Hsinchu, TW;
Wen-Hung Huang, Hsinchu, TW;
Kuo-Feng Yu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An n-type field effect transistor includes semiconductor channel members vertically stacked over a substrate, a gate dielectric layer wrapping around each of the semiconductor channel members, and a work function layer disposed over the gate dielectric layer. The work function layer wraps around each of the semiconductor channel members. The n-type field effect transistor also includes a WF isolation layer disposed over the WF layer and a gate metal fill layer disposed over the WF isolation layer. The WF isolation layer fills gaps between adjacent semiconductor channel members.