The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Mar. 28, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Dirk Utess, Dresden, DE;

Zhixing Zhao, Dresden, DE;

Dominik M. Kleimaier, Dresden, DE;

Irfan A. Saadat, Santa Clara, CA (US);

Florent Ravaux, Wimille, FR;

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 27/092 (2006.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 64/258 (2025.01); H10D 30/794 (2025.01); H10D 64/01 (2025.01); H10D 84/85 (2025.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a layout optimization for radio frequency (RF) device performance and methods of manufacture. The structure includes: a first active device on a substrate; source and drain diffusion regions adjacent to the first active device; and a first contact in electrical contact with the source and drain diffusion regions and which is spaced away from the first active device to optimize a stress component in a channel region of the first active device.


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