The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
May. 26, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-De Ho, Hsinchu, TW;
Lan-Hsin Chiang, Hsinchu, TW;
Chien-Hua Huang, Toufen Township, Miaoli County, TW;
Chung-Te Lin, Tainan, TW;
Yung-Yu Wang, Hsinchu, TW;
Sheng-Yuan Chang, Hsinchu, TW;
Kai-Chieh Liang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor structure are provided. The semiconductor structure includes an insulating layer covering a device region and an alignment mark region of a semiconductor substrate. A conductive feature is formed in the insulating layer and corresponds to the device region. An alignment mark structure is formed in the first insulating layer and corresponds to the alignment mark region. The alignment mark structure includes a first conductive layer, a second conductive layer covering the first conductive layer, and a first magnetic tunnel junction (MTJ) stack layer covering the second conductive layer. The first conductive layer and the conductive feature are made of the same material.