The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Jun. 30, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Jinghao Wang, Hefei, CN;
Junbo Pan, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming a semiconductor structure includes: a substrate is provided, in which active areas arranged in a matrix and isolation structures for isolating active areas from each other are formed in substrate, a first direction is a column direction of matrix and a second direction is a row direction of matrix; a conductive layer is formed on substrate; at least conductive layer is etched to form a plurality of bit line grooves extending along first direction and arranged along second direction and a plurality of conductive lines extending along first direction and arranged along second direction; a bit line structure is formed in each bit line groove, in which a gap is formed between bit line structure and each of two sides of a respective one of bit line grooves; and conductive lines are etched along second direction to form conductive pillars serving as storage node contact structures.