The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
May. 18, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G11C 5/06 (2006.01); H10B 12/00 (2023.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10B 12/395 (2023.02); G11C 5/063 (2013.01); H10B 12/0383 (2023.02); H10B 12/0385 (2023.02); H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02); H10D 64/513 (2025.01);
Abstract
Embodiments provide an integrated capacitor disposed directly over and aligned to a vertical gate all around memory cell transistor. In some embodiments, an air gap may be provided between adjacent word lines to provide a low k dielectric effect between word lines. In some embodiments, a bottom bitline structure may be split across multiple layers. In some embodiments, a second tier of vertical cells may be positioned over a first tier of vertical cells.