The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Apr. 17, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Sanh D. Tang, Meridian, ID (US);

Ke-Hung Chen, Boise, ID (US);

Christopher W. Petz, Boise, ID (US);

Pankaj Sharma, Boise, ID (US);

Yong Mo Yang, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 1/68 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10D 1/692 (2025.01); H10D 84/811 (2025.01);
Abstract

Some embodiments include an integrated assembly having capacitor-contact-regions. Metal-containing interconnects are coupled with the capacitor-contact-regions. A first insulative material is between the metal-containing interconnects. A second insulative material is over the first insulative material. A third insulative material is over the second insulative material. First capacitor electrodes extend through the second and third insulative materials and are coupled with the metal-containing interconnects. Fourth insulative material is adjacent the first capacitor electrodes. Capacitor plate electrodes are adjacent the fourth insulative material and are spaced from the first capacitor electrodes by the fourth insulative material. Some embodiments include methods of forming integrated assemblies.


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