The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Dec. 23, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Lior Gil, Haifa, IL;

Kosta Luria, Pardesiya M, IL;

Michael Zelikson, Haifa HA, IL;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 3/158 (2013.01); H02M 1/008 (2021.05);
Abstract

The circuits and methods described herein provide technical solutions for technical problems facing power driver circuits. To reduce or eliminate effects associated with a gate capacitance discharge current and inconsistent effective V, the discharge process may be split into two phases. During a first phase, the transistor gate charge is drained into ground through a large path gate. The ground (GND) features a very low impedance, hence the resulting δV(t)|is negligible even for high discharge currents. The transistor gate node voltage (V) is constantly monitored, and the discharge process switches from the first phase to the second phase when Vtransgresses a bias voltage threshold based on the target value of V. To switch from the first phase to the second phase, the current path into GND is cut by switching its path gate to an OFF state, and an alternative path is enabled between transistor gate charge and V.


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