The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Aug. 23, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Yuanhao Gao, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/7684 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract
A method for forming the semiconductor structure includes: a wafer in which a semiconductor device is formed is provided; a blind hole is formed in the wafer; a first metal material is deposited in the blind hole to form a through silicon via; and a first metal material deposited on a surface of the wafer is removed, and the surface of the wafer is planarized.
Gao, Yuanhao. (2025). Semiconductor structure, method for forming same, and wafer on wafer bonding method (U.S. Patent No. 12322654). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12322654
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile