The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Jun. 03, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Kai Lin, Changhua County, TW;
Po-Cheng Shih, Hsinchu, TW;
Jr-Hung Li, Chupei, TW;
Tze-Liang Lee, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76829 (2013.01); H01L 21/02178 (2013.01); H01L 21/02205 (2013.01); H01L 21/0228 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 23/53266 (2013.01); H01L 23/535 (2013.01);
Abstract
Semiconductor devices and methods of manufacture are presented herein in which a etch stop layer is selectively deposited over a conductive contact. A dielectric layer is formed over the etch stop layer and an opening is formed through the dielectric layer and the etch stop layer to expose the conductive contact. Conductive material is then deposited to fill the opening.