The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Jun. 21, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Xiang Liu, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/76 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02161 (2013.01); H01L 21/30604 (2013.01); H01L 21/7602 (2013.01); H01L 21/7688 (2013.01);
Abstract

Embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The semiconductor structure includes: a semiconductor substrate including a plurality of active areas and first isolation structures arranged at intervals along a first direction; gate structures located in the active areas and the first isolation structures. Top surfaces of the active areas extend beyond top surfaces of the gate structures; second isolation structures with a preset height located on surfaces of the gate structures, and the top surfaces of the second isolation structures are flush with the top surfaces of the active areas.


Find Patent Forward Citations

Liu, Xiang. (2025). Semiconductor structure and method for forming same (U.S. Patent No. 12322589). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12322589

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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