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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12322440 B1

PDFFull Text
Date of Patent:
Jun. 03, 2025

Filed:

Sep. 01, 2022

Programming operation of memory device being switched from high-density mode to high speed mode and/or lower power mode

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Violante Moschiano, Avezzano, IT;

Andrea Smaniotto, Albignasego, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Perkins Coie LLP

Primary Examiner:

J H Hur

Int. Cl.
CPC ...
G11C 11/56 (2006.01); G06F 1/30 (2006.01); G11C 5/14 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G06F 1/30 (2013.01); G11C 5/143 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); G11C 2211/5641 (2013.01);
Abstract

Memory devices and methods for operating the same are described. The memory devices may include non-volatile memory having a plurality of memory cells, and a controller. The controller may be configured to begin a first programming operation configured to program a first one of the plurality of memory cells with more than one bit of information, terminate the first programming operation in response to detecting a power loss event, and program, with a second programming operation, second and third ones of the plurality of memory cells with the more than one bit of information.

Find Patent Forward Citations

Moschiano, Violante. (2025). Programming operation of memory device being switched from high-density mode to high speed mode and/or lower power mode (U.S. Patent No. 12322440). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12322440

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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