The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Aug. 16, 2024
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Abdelsalam Aboketaf, Essex Junction, VT (US);
Yusheng Bian, Ballston Lake, NY (US);
Won Suk Lee, Malta, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/223 (2025.01); G02B 6/12 (2006.01); H10F 71/00 (2025.01); H10F 77/122 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); H10F 30/223 (2025.01); H10F 71/1212 (2025.01); H10F 77/122 (2025.01); H10F 77/413 (2025.01);
Abstract
Structures for a photonic chip that include a photodetector and methods of forming such structures. The structure comprises a photodetector including a pad, a first semiconductor layer on the pad, and a second semiconductor layer on the pad. The second semiconductor layer is laterally spaced from the first semiconductor layer. The structure further comprises a first waveguide core connected to the pad adjacent to the first semiconductor layer, and a second waveguide core connected to the pad adjacent to the second semiconductor layer.