The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Nov. 16, 2021
Applicant:

Advantest Test Solutions, Inc., San Jose, CA (US);

Inventors:

Samer Kabbani, San Jose, CA (US);

Paul Ferrari, San Jose, CA (US);

Ikeda Hiroki, San Jose, CA (US);

Kiyokawa Toshiyuki, San Jose, CA (US);

Gregory Cruzan, San Jose, CA (US);

Karthik Ranganathan, San Jose, CA (US);

Assignee:

Advantest Test Solutions, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); G01R 31/3185 (2006.01); H01L 23/473 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2887 (2013.01); G01R 31/318511 (2013.01); H01L 23/473 (2013.01); F28F 2260/02 (2013.01);
Abstract

A system for testing circuits of an integrated circuit semiconductor wafer includes a tester system for generating signals for input to the circuits and for processing output signals from the circuits for testing the wafer and a test stack coupled to the tester system. The test stack includes a wafer probe for contacting a first surface of the wafer and for probing individual circuits of the circuits of the wafer, a wafer thermal interposer (TI) layer operable to contact a second surface of the wafer and operable to selectively heat areas of the wafer, and a cold plate disposed under the wafer TI layer and operable to cool the wafer. The system further includes a thermal controller for selectively heating and maintaining temperatures of the areas of the wafer by controlling cooling of the cold plate and by controlling selective heating of the wafer TI layer.


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