The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Jul. 27, 2021
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventor:
Ching-Shan Lin, Hsinchu, TW;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/02 (2006.01); C01B 32/956 (2017.01); C23C 14/06 (2006.01); C23C 14/58 (2006.01); C30B 29/36 (2006.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
C01B 32/956 (2017.08); C23C 14/0635 (2013.01); C23C 14/5806 (2013.01); C30B 29/36 (2013.01); C30B 33/02 (2013.01); C01P 2006/40 (2013.01); H10D 62/8325 (2025.01);
Abstract
A method of fabricating a silicon carbide material is provided. The method includes the following steps. A first annealing process is performed on a wafer or on an ingot that forms the wafer after wafer slicing. The conditions of the first annealing process include: a heating rate of 10° C./minute to 30° C./minute, an annealing temperature of 2000° C. or less, and a constant temperature annealing time of 2 minutes or more and 4 hours or less for performing the first annealing process. After performing the first annealing process, an average resistivity of the wafer or the ingot is greater than 10Ω·cm.