The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Sep. 01, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Wonkeun Chung, Seoul, KR;
Byungchul Kang, Suwon-si, KR;
Hongkeun Park, Suwon-si, KR;
Hoonjoo Na, Seoul, KR;
Chunghwan Shin, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate that includes an active pattern, a channel pattern and a source/drain pattern on the active pattern, a gate electrode on the channel pattern, an active contact electrically connected to the source/drain pattern, and a gate contact electrically connected to the gate electrode. The active contact includes a first barrier pattern, a first seed pattern on the first barrier pattern, a first fill pattern on the first seed pattern, and a first metal-containing pattern between the first seed pattern and the first fill pattern. The first metal-containing pattern includes tungsten nitride. A nitrogen concentration of the first metal-containing pattern decreases in a direction toward the substrate.