The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Sep. 07, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Yu-Rung Hsu, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/00 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 64/018 (2025.01); H10D 30/031 (2025.01); H10D 30/502 (2025.01); H10D 30/6758 (2025.01); H10D 62/116 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01);
Abstract

A semiconductor device and a method of forming the same are disclosed. The method includes forming a fin with a sacrificial layer on a semiconductor substrate, forming isolation regions on the semiconductor substrate and adjacent to the fin, forming a superlattice structure with first and second nanostructured layers on the sacrificial layer, forming a sacrificial structure that surrounds the superlattice structure, forming a first spacer on the superlattice structure, forming an air gap between the superlattice structure and the fin, and forming a second spacer on the fin and below the superlattice structure.


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