The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Dec. 21, 2020
Applicant:

Panasonic Holdings Corporation, Osaka, JP;

Inventors:

Masahiro Ogawa, Osaka, JP;

Daisuke Shibata, Kyoto, JP;

Satoshi Tamura, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 30/83 (2025.01); H10D 30/87 (2025.01); H10D 62/83 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8503 (2025.01); H10D 30/051 (2025.01); H10D 30/061 (2025.01); H10D 30/47 (2025.01); H10D 30/83 (2025.01); H10D 30/87 (2025.01); H10D 62/83 (2025.01);
Abstract

A nitride semiconductor device includes a substrate, a first electron transport layer above the substrate, a first electron supply layer above the first electron transport layer, a first nitride semiconductor layer above the first electron supply layer, a first opening passing through the first nitride semiconductor layer and the first electron supply layer and reaching the first electron transport layer, a second electron transport layer disposed above the first nitride semiconductor layer and along the inner surface of the first opening, a second electron supply layer disposed above the second electron transport layer and covering the first opening, a gate electrode disposed above the second electron supply layer and covering the first opening, a source electrode connected to the first nitride semiconductor layer and the second electron transport layer, and a drain electrode.


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