The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Feb. 01, 2022
Applicant:
Wolfspeed, Inc., Durham, NC (US);
Inventor:
Thomas E. Harrington, Iii, Durham, NC (US);
Assignee:
Wolfspeed, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/53 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 62/393 (2025.01); H10D 12/031 (2025.01); H10D 12/481 (2025.01); H10D 30/668 (2025.01); H10D 62/112 (2025.01); H10D 62/142 (2025.01); H10D 62/53 (2025.01); H10D 62/8325 (2025.01);
Abstract
A power semiconductor device includes a semiconductor layer structure comprising a drift region of a first conductivity type, and first and second contacts on the semiconductor layer structure. The drift region comprises a wide bandgap semiconductor material, and is configured to provide unipolar conduction between the first and second contacts below a current density threshold, and bipolar conduction between the first and second contacts above the current density threshold. Related devices and fabrication methods are also discussed.