The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Oct. 08, 2024
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventor:
Kyong Jin Hwang, Singapore, SG;
Assignee:
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H10D 62/124 (2025.01); H01L 21/76229 (2013.01); H01L 21/76831 (2013.01);
Abstract
Structures for a high-voltage field-effect transistor that include a deep trench isolation region and methods of forming such structures. The structure comprises a semiconductor substrate, a semiconductor layer on the semiconductor substrate, and a doped layer between the semiconductor layer and the semiconductor substrate. The structure further comprises a trench isolation region including a metal layer that extends through the semiconductor layer and the doped layer into the semiconductor substrate.