The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Jul. 04, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Kuang-Hsiu Chen, Tainan, TW;

Sung-Yuan Tsai, Yunlin County, TW;

Chi-Hsuan Tang, Kaohsiung, TW;

Chun-Wei Yu, Tainan, TW;

Yu-Ren Wang, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); H10D 30/01 (2025.01); H10D 62/13 (2025.01); H10D 62/60 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/797 (2025.01); H10D 30/0223 (2025.01); H10D 62/151 (2025.01); H10D 62/60 (2025.01); H10D 64/015 (2025.01); H10D 64/021 (2025.01); H10D 64/514 (2025.01);
Abstract

A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.


Find Patent Forward Citations

Loading…