The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Apr. 10, 2023
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Junichi Koezuka, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Yasuharu Hosaka, Tochigi, JP;
Toshimitsu Obonai, Shimotsuke, JP;
Yasutaka Nakazawa, Tochigi, JP;
Seiji Yasumoto, Tochigi, JP;
Shunpei Yamazaki, Setagaya, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.