The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Apr. 03, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Sheng Yun, Taipei, TW;
Shao-Ming Yu, Hsinchu County, TW;
Tung-Ying Lee, Hsinchu, TW;
Chih-Chieh Yeh, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a plurality of semiconductor fins extending from a substrate. A plurality of first source/drain regions are epitaxially grown from first regions of the semiconductor fins. Adjacent two of the plurality of first source/drain regions grown from adjacent two of the plurality of semiconductor fins are spaced apart by an isolation dielectric. A gate structure laterally surrounds second regions of the plurality of semiconductor fins above the first regions of the plurality of semiconductor fins. A plurality of second source/drain regions are over third regions of the plurality of semiconductor fins above the second regions of the plurality of semiconductor fins.