The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Apr. 15, 2024
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Kuo-Cheng Chiang, Hsinchu County, TW;

Teng-Chun Tsai, Hsinchu, TW;

Kuan-Lun Cheng, Hsin-Chu, TW;

Chih-Hao Wang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/161 (2006.01); H10D 30/01 (2025.01); H10D 62/832 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/822 (2025.01);
U.S. Cl.
CPC ...
H10D 30/0243 (2025.01); H01L 21/76229 (2013.01); H10D 62/832 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 84/0135 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01); H10D 84/853 (2025.01); H10D 30/6219 (2025.01); H10D 30/797 (2025.01); H10D 62/822 (2025.01);
Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes device fins formed on a substrate; fill fins formed on the substrate and disposed among the device fins; and gate stacks formed on the device fins and the fill fins. The fill fins include a first dielectric material layer and a second dielectric material layer deposited on the first dielectric material layer. The first and second dielectric material layers are different from each other in composition.


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