The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Aug. 04, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tung-Ying Lee, Hsinchu, TW;
Shao-Ming Yu, Hsinchu County, TW;
Win-San Khwa, Taipei, TW;
Yu-Chao Lin, Hsinchu, TW;
Chien-Hsing Lee, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A memory device and a semiconductor die are provided. The memory device includes single-level-cells (SLCs) and multi-level-cells (MLCs). Each of the SLCs and the MLCs includes: a phase change layer; and a first electrode, in contact with the phase change layer, and configured to provide joule heat to the phase change layer during a programming operation. The first electrode in each of the MLCs is greater in footprint area as compared to the first electrode in each of the SLCs.