The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Apr. 29, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Shuai Guo, Hefei, CN;

Mingguang Zuo, Hefei, CN;

Shijie Bai, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02);
Abstract

The present disclosure relates to the technical field of semiconductor manufacturing, and in particular, to a memory device, and a manufacturing method and a driving method thereof. The memory device includes: a substrate; a stacked structure, where the stacked structure includes a first gate layer, a second gate layer, and interlayer isolation layers, one of the interlayer isolation layers is located between the first gate layer and the second gate layer, and another one of the interlayer isolation layers is located between the first gate layer and the substrate; and a memory structure, including a through hole penetrating the stacked structure, and a trench structure filled in the through hole. The present disclosure enables the memory device to be used as nonvolatile memory with different storage modes, thereby realizing versatility of the memory device.


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