The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

May. 18, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Sheng-Ting Fan, Taipei, TW;

Wei-Chen Chen, Taoyuan, TW;

Hang-Ting Lue, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H10B 12/20 (2023.02); H01L 23/5283 (2013.01);
Abstract

A memory structure includes a substrate; a first gate structure, a second gate structure and a third gate structure disposed on the substrate, separated from each other along the first direction and respectively extending along the second direction and the third direction; channel bodies separated from each other and passing through the first gate structure, the second gate structure and the third gate structure along the first direction; dielectric films disposed between the first gate structure, the second gate structure, the third gate structure and the channel bodies; and a first side plug electrically connected to the substrate and the channel bodies. The first gate structure, the second gate structure and the third gate structure surround each of the dielectric films and each of the channel bodies, and the dielectric films do not include a charge storage structure.


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