The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Oct. 22, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsien-Wei Chen, Hsinchu, TW;

Ming-Fa Chen, Taichung, TW;

Sung-Feng Yeh, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/02 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 25/0655 (2013.01); H01L 21/566 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/30 (2013.01); H01L 24/73 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02373 (2013.01);
Abstract

A package structure includes at least one semiconductor die, an insulating encapsulant, an isolation layer and a redistribution layer. The at least one first semiconductor die has a semiconductor substrate and a conductive post disposed on the semiconductor substrate. The insulating encapsulant is partially encapsulating the first semiconductor die, wherein the conductive post has a first portion surrounded by the insulating encapsulant and a second portion that protrudes out from the insulating encapsulant. The isolation layer is disposed on the insulating encapsulant and surrounding the second portion of the conductive post. The redistribution layer is disposed on the first semiconductor die and the isolation layer, wherein the redistribution layer is electrically connected to the conductive post of the first semiconductor die.


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