The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Jun. 16, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Indra V. Chary, Boise, ID (US);

Shuangqiang Luo, Boise, ID (US);

Lifang Xu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/535 (2006.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A microelectronic device comprises a stack structure, contact structures, and additional contact structures. The stack structure comprises a vertically alternating sequence of conductive material and insulative material arranged in tiers. The stack structure is divided into blocks each comprising a stadium structure including steps comprising horizontal ends of the tiers. The contact structures are within a horizontal area of the stadium structure and vertically extend through the stack structure. The additional contact structures are on at least some of the steps of the stadium structure and are coupled to the contact structures. Memory devices and electronic devices are also disclosed.


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