The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Jan. 04, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Luguang Wang, Hefei, CN;
Xiaoling Wang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present application provides a semiconductor structure and a manufacturing method thereof. The method of manufacturing the semiconductor structure includes: providing a base, the base including a substrate and a first dielectric layer on the substrate; forming a through silicon via in the base, the through silicon via penetrating through the first dielectric layer, extending into the substrate, and having a depth less than a thickness of the base; forming an electrically conductive structure in the through silicon via; forming a filling hole in the first dielectric layer and the substrate, the filling hole surrounding the electrically conductive structure, exposing a sidewall of the electrically conductive structure and a part of the substrate, and having a stepwise sidewall; and forming a thermally conductive structure in the filling hole.