Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms

Abstract

A method for making a semiconductor device may include forming a superlattice above a semiconductor layer, the superlattice including a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include selectively etching the superlattice to remove semiconductor atoms and cause non-semiconductor atoms to accumulate adjacent the semiconductor layer, epitaxially growing an active semiconductor device layer above the semiconductor layer and accumulated non-semiconductor atoms after the selective etching, and forming at least one circuit in the epitaxially grown active semiconductor device layer.