The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

May. 06, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Cedric Thomas, Miyagi, JP;

Shihchin Lee, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32146 (2013.01); H01J 37/3211 (2013.01); H01J 37/32155 (2013.01); H01J 37/32715 (2013.01); H01L 21/3065 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a source RF generator coupled to the plasma processing chamber, and configured to generate a pulse source RF signal including a plurality of source cycles; and a bias RF generator coupled to the substrate support, and configured to generate a pulse bias RF signal. A transition timing to the bias operating state in each bias cycle is delayed with respect to a transition timing to the source operating state in a corresponding source cycle, the source non-operating period overlaps with the bias non-operating period, and the bias operating period in each bias cycle overlaps with the source operating period in the next source cycle.


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