The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Jan. 18, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yi-Ning Peng, Miaoli County, TW;
Hsueh-Chun Hsiao, Hsinchu County, TW;
Tzu-Yun Chang, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/10 (2023.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); H10B 41/27 (2023.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/08 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10D 30/681 (2025.01);
Abstract
An electrically erasable programmable read only memory (EEPROM) includes a substrate, isolation structures, a row of erase gate and a row of floating gates. The isolation structures are defined in the substrate to extend in a first direction. The row of erase gate having a wave shape is disposed across the substrate. The row of floating gates having staggered islands is disposed parallel to the row of erase gate. A method of forming said electrically erasable programmable read only memory (EEPROM) is also provided.