The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Jan. 18, 2021
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yi-Ning Peng, Miaoli County, TW;

Hsueh-Chun Hsiao, Hsinchu County, TW;

Tzu-Yun Chang, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/10 (2023.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); H10B 41/27 (2023.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/08 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10D 30/681 (2025.01);
Abstract

An electrically erasable programmable read only memory (EEPROM) includes a substrate, isolation structures, a row of erase gate and a row of floating gates. The isolation structures are defined in the substrate to extend in a first direction. The row of erase gate having a wave shape is disposed across the substrate. The row of floating gates having staggered islands is disposed parallel to the row of erase gate. A method of forming said electrically erasable programmable read only memory (EEPROM) is also provided.


Find Patent Forward Citations

Peng, Yi-Ning. (2025). Semiconductor structure with wave shaped erase gate and forming method thereof (U.S. Patent No. 12315571). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12315571

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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