The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Mar. 10, 2022
Applicant:
Ememory Technology Inc., Hsin-Chu, TW;
Inventors:
Jui-Ming Kuo, Hsinchu County, TW;
Hung-Yi Liao, Hsinchu County, TW;
Wei-Ren Chen, Hsinchu County, TW;
Wein-Town Sun, Hsinchu County, TW;
Assignee:
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); H10B 41/00 (2023.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0441 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); H10B 41/00 (2023.02);
Abstract
A differential memory cell array structure for a MTP non-volatile memory is provided. The array structure is connected to a source line, a word line, a bit line, an inverted bit liner and an erase line. After an erase operation (ERS) is completed, the stored data in the differential memory cells of the selected row are not all erased. That is, only the stored data in a single selected memory cell of the selected row is erased.