The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Apr. 30, 2020
Applicant:
Siltronic Ag, Munich, DE;
Inventors:
Michael Boy, Waging am See, DE;
Ludwig Koester, Burghausen, DE;
Elena Soyka, Emmerting, DE;
Peter Storck, Burghausen, DE;
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 25/72 (2006.01); C30B 29/06 (2006.01); C30B 33/02 (2006.01); H01L 21/66 (2006.01); C30B 13/00 (2006.01); C30B 15/00 (2006.01);
U.S. Cl.
CPC ...
G01N 25/72 (2013.01); C30B 29/06 (2013.01); C30B 33/02 (2013.01); H01L 22/12 (2013.01); C30B 13/00 (2013.01); C30B 15/00 (2013.01);
Abstract
Suitability of silicon wafers for use in device processing without generation of fatal defects is assessed by using SIRD to measure stress in a wafer cut from a piece of a crystal ingot after first and second thermal treatments of the water, the second thermal treatment consisting of a heating phase, a holding phase, and a cooling phase. The result is used to consider whether silicon wafers cut from the piece can adequately survive device processing without generating excess defects.